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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION *With TO-3 package *Excellent safe operating area *Low collector saturation voltage APPLICATIONS *For audio amplifier and power switching PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 110 100 7 7.5 115 150 -65~200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL R(th) jc PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2N3233 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V VCE(sat) VBE(on) ICEO Collector-emitter saturation voltage IC=5A; IB=0.5A IC=3A ; VCE=4V 1.0 V Base-emitter on voltage 1.5 V Collector cut-off current VCE=50V; IB=0 0.7 mA ICBO Collector cut-off current VCB=110V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=10V 18 55 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3233 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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